Improved temperature error model of silicon MEMS gyroscope with inside frame driving
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摘要: 温度误差是MEMS(Micro Electronic Mechanical System)陀螺仪的主要误差源之一,为了消除温度对内框架驱动式硅MEMS陀螺仪性能的影响,提出了一种改进的温度误差模型.基于硅材料的赛贝克(Seebeek)效应,结合表头温度变形,分析了陀螺仪零偏误差;利用温度引起的干扰力矩,分析了陀螺仪输出与比力及角加速度有关项误差;针对温度引起系统谐振频率的变化,分析了陀螺仪标度因数误差.试验结果表明:在温度变化过程中,比力引起的干扰力矩是导致陀螺仪温度误差的主要因素,验证了改进的温度误差模型的正确性,补偿后陀螺仪的零偏稳定性提高了53.75倍,标度因数精度提高了19.6倍,改进的温度误差模型也适用于其它MEMS陀螺仪.Abstract: Temperature error is one of the main errors for MEMS(micro electronic mechanical system)gyroscopes. For eliminating temperature error of silicon MEMS gyroscope with inside frame driving, the improved temperature error model of gyroscope was presented. Based on the Seebeek theory of silicon material and the distortion depending on temperature of microstructure, the bias error was analyzed. The interferential moment depending on temperature was employed to analyze the error which relates with force and angular acceleration. According to the inherent frequency change depending on temperature, the error of scale factor was analyzed. The experimental results show that the interferential moment which relates with force is primary factor resulting in bias error of gyroscope during temperature change and verified the accuracy of the theories model. The bias stability and scale factor precision of gyroscope compensated by improved temperature error model were improved 53.75 and 19.6 times respectively. The improved temperature error model is applicable to other silicon MEMS gyroscopes.
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