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硅通孔中电致应力的有限元分析

苏飞 卢子兴 刘萍 王渊

苏飞, 卢子兴, 刘萍, 等 . 硅通孔中电致应力的有限元分析[J]. 北京航空航天大学学报, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646
引用本文: 苏飞, 卢子兴, 刘萍, 等 . 硅通孔中电致应力的有限元分析[J]. 北京航空航天大学学报, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646
Su Fei, Lu Zixing, Liu Ping, et al. Finite element analysis of electromigration induced stress in through-silicon-via[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646(in Chinese)
Citation: Su Fei, Lu Zixing, Liu Ping, et al. Finite element analysis of electromigration induced stress in through-silicon-via[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(11): 1500-1506. doi: 10.13700/j.bh.1001-5965.2013.0646(in Chinese)

硅通孔中电致应力的有限元分析

doi: 10.13700/j.bh.1001-5965.2013.0646
基金项目: 国家自然科学基金资助项目(11172027,11372024)
详细信息
    作者简介:

    苏飞(1968-),男,河南安阳人,副教授,sufei@buaa.edu.cn.

  • 中图分类号: TN406;V257

Finite element analysis of electromigration induced stress in through-silicon-via

  • 摘要: 在三维电子封装中,硅通孔(TSV,Through-Silicon-Via)是实现芯片垂直互连的关键环节,其可靠性至关重要.随着硅通孔中电流密度的增大,电致应力对TSV可靠性的影响也越来越大.基于该耦合方程和有限元的一般原理,详细地推导了弹性材料属性下TSV内部的电致应力、应变的有限元分析模型;利用ABAQUS中的用户自定义单元(user defining element)接口,实现了该模型的有限元计算,并利用解析解对该有限元模型的正确性进行了验证.利用有限元模型对TSV中铜填充的电迁移问题进行了分析计算,描述了铜填充在电迁移过程中电致应力、应变以及空位浓度的演化过程和分布规律,为三维电子封装可靠性的全面评估提供了一定的依据.

     

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出版历程
  • 收稿日期:  2013-11-14
  • 网络出版日期:  2014-11-20

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