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弹用电磁继电器贮存退化试验及其寿命预测方法

王召斌 符赛 尚尚 翟国富

王召斌, 符赛, 尚尚, 等 . 弹用电磁继电器贮存退化试验及其寿命预测方法[J]. 北京航空航天大学学报, 2016, 42(12): 2610-2619. doi: 10.13700/j.bh.1001-5965.2015.0789
引用本文: 王召斌, 符赛, 尚尚, 等 . 弹用电磁继电器贮存退化试验及其寿命预测方法[J]. 北京航空航天大学学报, 2016, 42(12): 2610-2619. doi: 10.13700/j.bh.1001-5965.2015.0789
WANG Zhaobin, FU Sai, SHANG Shang, et al. Storage degradation testing and life prediction for missile electromagnetic relay[J]. Journal of Beijing University of Aeronautics and Astronautics, 2016, 42(12): 2610-2619. doi: 10.13700/j.bh.1001-5965.2015.0789(in Chinese)
Citation: WANG Zhaobin, FU Sai, SHANG Shang, et al. Storage degradation testing and life prediction for missile electromagnetic relay[J]. Journal of Beijing University of Aeronautics and Astronautics, 2016, 42(12): 2610-2619. doi: 10.13700/j.bh.1001-5965.2015.0789(in Chinese)

弹用电磁继电器贮存退化试验及其寿命预测方法

doi: 10.13700/j.bh.1001-5965.2015.0789
基金项目: 

国家自然科基金 51507074

江苏省高校自然科学研究面上资助项目 15KJB470003

中国博士后科学基金 2015M571898

机械工程浙江省重中之重学科和浙江理工大学重点实验室开放基金 ZSTUME01A02

详细信息
    通讯作者:

    王召斌, 男, 博士, 副教授, 硕士生导师。主要研究方向:航天电器的可靠性理论、测试技术与健康管理。Tel.:0511-84401153, E-mail:wangzb@just.edu.cn

  • 中图分类号: V242.4+.22;TM581.3

Storage degradation testing and life prediction for missile electromagnetic relay

Funds: 

National Natural Science Foundation of China 51507074

Natural Science Foundation of the Higher Education Institutions of Jiangsu Province, China 15KJB470003

China Postdoctoral Science Foundation 2015M571898

Open Foundation of Zhejiang Provincial Top Key Academic Discipline of Mechanical Engineering and Zhejiang Sci-Tech University Key Laboratory ZSTUME01A02

More Information
  • 摘要:

    弹用电磁继电器(EMR)是国防武器系统中重要的机电元件,负责信号传递、电路保护与控制、负载切换等功能,对弹用EMR贮存可靠性的可靠评估已成为亟待解决的问题。以装备应用普遍的某型弹用EMR为例,提出一种考虑性能退化的贮存可靠性试验和评价方法。通过研制的弹用EMR贮存退化试验综合系统,获得了其贮存退化敏感参数的变化情况,对弹用EMR的贮存可靠性建模方法进行了探索性研究。提出了基于时间序列分析和小波变换方法的实测参数预处理方法,提高了预测精度。通过回归理论估计了贮存退化模型的参数,并用所建模型对弹用EMR正常温度应力下的贮存寿命进行了预测。

     

  • 图 1  某型弹用电磁继电器结构示意图

    Figure 1.  Structure schematic of missile electromagnetic relay

    图 2  触点间表面腐蚀膜向心渗入示意图

    A0-初始时刻的导电斑点平均直径;At-t时刻时导电斑点的平均直径。

    Figure 2.  Schematic of ingress inward of surface corrosion film in static contact

    图 3  继电器静合触点形貌

    Figure 3.  Normal closed static contact morphology of relay

    图 4  弹用电磁继电器贮存退化试验系统整体结构及照片

    Figure 4.  Major structure and photo of storage degradation testing system for missile EMR

    图 5  不同温度下接触电阻退化量平均值的对比图

    Figure 5.  Comparison diagram of average degradation contact resistances at different temperatures

    图 6  不同温度下接触电阻实测值的散点连线图

    Figure 6.  Scatter plots of real test data for contact resistances at different temperatures

    图 7  趋势项提取的算法流程图

    Figure 7.  Flowchart of trend extraction algorithm

    图 8  不同温度应力下接触电阻的预处理结果

    Figure 8.  Results of pretreatment for contact resistances with different temperature stresses

    图 9  不同温度应力下弹用电磁继电器贮存寿命预测曲线

    Figure 9.  Prediction curve of storage life for missile EMR with different temperature stresses

    表  1  弹用电磁继电器相关部件耐热等级

    Table  1.   Heat-resistant levels of relevant components for missile EMR

    部件名称 构成材料 耐热等级
    底板绝缘垫片 6050聚酰亚胺薄膜 H级(180℃)
    润滑垫片 6050聚酰亚胺薄膜 H级(180℃)
    线圈挡板 聚四氟乙烯棒 C级(220℃)
    线圈组漆包线 改良聚酯亚胺漆包线(E180) H级(180℃)
    线圈组漆包线 聚酰亚胺漆包线(QY-1) C级(220℃)
    下载: 导出CSV

    表  2  加速退化试验条件

    Table  2.   Conditions of accelerated degradation test

    参数 数值
    试验温度应力/℃ 80,106,135,170
    试样数量 每个温度取10支
    测试频率/d 2
    负载电流/mA 10(防止产生电弧破坏触点形貌)
    其他要求 冷却至室温后再进行参数测试
    下载: 导出CSV

    表  3  最优回归贮存退化模型函数备选库

    Table  3.   Alternative function library of the best storage regress degradation model

    初始回归函数形式 变换过程 变换后的
    线性回归方程
    线性函数: Y=α0+α1X1
    指数函数: Y=α0+α1X1
    幂函数: Y=α0+α1X1
    下载: 导出CSV

    表  4  贮存试验样品的最优回归退化模型及贮存寿命预测结果

    Table  4.   Best regress degradation model and storage life prediction results for storage test samples

    温度/℃ S 最优回归
    退化模型
    预测参数
    失效阈值D/mΩ
    预测寿命
    点估计TD/d
    区间估计
    (TDX, TDS)/d
    线性函数 指数函数 幂函数
    80 2.408 2.297 7.150 指数函数 50 6012 (5746, 6548)
    106 0.315 0.259 4.677 指数函数 50 5424 (5356, 5566)
    135 5.246 4.877 15.637 指数函数 50 4136 (3988, 4550)
    170 0.219 0.099 21.712 指数函数 50 2234 (2218, 2242)
    下载: 导出CSV

    表  5  弹用电磁继电器常温下的贮存寿命预测值

    Table  5.   Storage life prediction results of missile EMR in normal temperature stress levels

    正常温度应力条件/℃ 25 32 45
    贮存寿命预测值/d 16388 14531 11785
    下载: 导出CSV
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出版历程
  • 收稿日期:  2015-12-01
  • 录用日期:  2016-01-28
  • 网络出版日期:  2017-12-20

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