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摘要:
研究了三维集成电路（3D ICs）中硅通孔（TSV）的建模方法及三维集成电路电源分配网络（PDN）的建模方法，并结合印制电路板（PCB）的电源分布网络和芯片PDN模型，提出了一种对板级三维集成电路进行电源网络上电磁敏感性（EMS）的建模和协同分析方法。首先给出了地-信号（GS）结构和地-信号1-信号2-地（GSSG）结构TSV的电路模型，电路模型与数值仿真结果做了对比，验证了TSV电路建模方法的准确性。接着对PCB板级三维集成电路中PCB的电源分布网络，PCB过孔，集成电路封装参数进行建模。最后创建了一个PCB-三维集成电路电磁敏感性级联分析模型，使用该模型来研究三维集成电路对电源干扰的敏感特性，并由此指导三维集成电路的敏感性分析。
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关键词:
- 硅通孔(TSV) /
- TSV电路模型 /
- 电源分配网络(PDN) /
- 电磁敏感性(EMS) /
- 印制电路板(PCB)
Abstract:This paper focuses on the circuit modeling method of through silicon via (TSV) and power distribution network (PDN) in 3D integrated circuits (3D ICs). Combined with the PDN on printed circuit board (PCB) and the chip PDN model, an electromagnetic susceptibility (EMS) modeling and collaborative analysis method for 3D ICs on PCB was proposed. Firstly, a ground-signal (GS) TSV pair and two TSV pairs of ground-signal1-signal2-ground (GSSG) were established in, and these circuit models were compared with the numerical simulation results, which validated the accuracy of the circuit modeling method of TSV. Then, the modeling method of PDN of PCB, PCB through via hole, IC's package parameters in an IC were discussed. Finally, an EMS cascade connection analysis model from PCB to 3D ICs was developed and used to analyze the electromagnetic susceptibility characteristics of 3D ICs to power interference, which can guide the susceptibility analysis of 3D ICs.
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图 3 HFSS和ADS中S11和S21的结果对比
Figure 3. Comparison of S11 and S21 resultsbetween HFSS and ADS
图 4 GSSG结构的TSV示意图
dBUMP—凸点直径；dTSV—TSV直径；hBUMP—凸点高度。
Figure 4. Schematic diagram of GSSG-structure TSV
图 6 ADS中建立的GSSG结构TSV的等效电路图
Figure 6. Equivalent circuit diagram of GSSG-structure TSV in ADS
图 7 HFSS和ADS中S参数仿真结果对比
Figure 7. Comparison of S parameter simulation results between HFSS and ADS
图 9 单个过孔结构的分解示意图
Figure 9. Schematic diagram of single via hole structure divided into small parts
图 13 在电源过孔中心电源/地平面间设置集总端口
Figure 13. Lumped port added between power and ground plane in center of power via hole
表 1 GS结构TSV对的模型参数
Table 1. Model parameters of GS-structure TSV pair
μm 参数 数值 h 100 rTSV 10 tOX 0.6 pTSV 40 t 1 t1 1 注：tOX—SiO2厚度；t1—铜平面厚度；t—SiO2平面厚度。 
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表 2 GSSG结构TSV的模型参数
Table 2. Model parameters of GSSG-structure TSV
μm 参数 数值 hTSV 100 rTSV 10 tOX 0.6 pTSV 40 rBUMP 15 hBUMP 5 t 1 注：rBUMP—凸点半径; hTSV—TSV高度。
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表 3 GSSG结构TSV的材料特性
Table 3. Material characteristics of GSSG-structure TSV
参数 数值 σSi/(S·m-1) 10 σTSV/(107 S·m-1) 5.8 σBUMP/(107 S·m-1) 5.8 εr, Si 11.9 εr, OX 4 εr, BCB 2.65 μr, TSV 1 μr, BUMP 1 注：σBUMP—凸点电导率；εr, Si—硅相对介电常数；εr, BCB —BCB相对介电常数；μr, TSV、μr, BUMP —TSV、凸点相对磁导率。
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表 4 BGA封装的pin1~pin4的参数提取结果
Table 4. Parameter extraction results of BGA package from pin1 to pin4
电阻/Ω 电容与互容/pF 自感与互感/nH R11=0.143 C11=0.209 L11=3.732 R22=0.142 C22=0.221 L22=3.697 R33=0.134 C33=0.218 L33=3.408 R44=0.122 C44=0.210 L44=3.092 C12=0.073 L21=1.621 C23=0.071 L13=1.062 C24=0.002 L14=0.521 C34=0.060 L23=1.492 C13=0.002 L24=0.619 L34=0.749
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