Comparison of power consumption and circuit performance between back bias in FDSOI and body bias in bulk silicon
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摘要:
针对功耗和工作频率对22 nm FDSOI背偏和28 nm体硅体偏电路的偏置能力进行对比和分析。以带有4级分频电路的65级环阵（RO）为例进行后仿真，后仿真结果表明，利用背偏技术的22 nm FDSOI环阵的输出频率可在57.8~206 MHz的范围内进行调节，相应的工作电流变化范围为24.4~90.4 μA；而利用体偏技术的28 nm体硅环阵的输出频率调节范围则为92.8~127 MHz，对应的工作电流变化范围为67.8~129 μA。对22 nm FDSOI工艺的环阵进行了实测，实测结果与仿真结果一致。分析认为，在功耗和性能2个方面，22 nm FDSOI电路的背偏调节能力优于28 nm体硅电路的体偏调节能力。
Abstract:In this paper, the body bias circuit in 28 nm bulk and the back bias circuit in 22 nm FDSOI are analyzed and compared from two aspects:power consumption and circuit performance. Taking a 65-stage ring oscillator (RO) with 4-level frequency divider as an example, post simulation was conducted. The simulatior results show that, for 22 nm FDSOI RO using the back bias technology, the output frequency can be adjusted from 57.8 MHz to 206 MHz, with the corresponding operating current varing from 24.4 μA to 90.4 μA, while for 28 nm bulk silicon RO using the body bias technology, the output frequency can be modulated from 92.8 MHz to 127 MHz, with the corresponding operating current varing from 67.8 μA to 129 μA. The 22 nm FDSOI process RO was measured and the measured results are consistent with the simulation results. Therefore, from the view of both power consumption and performance, the adjustment ability of 22 nm FDSOI circuits with back bias is much more efficient than that of 28 nm bulk circuits with body bias.
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Key words:
- body bias /
- bulk /
- back bias /
- FDSOI /
- ring oscillator (RO)
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图 4 28 nm体硅CMOS工艺环阵体偏电压对输出频率的影响
Figure 4. Output frequency response to body bias voltage of 28 nm bulk CMOS RO
图 5 22 nm FDSOI工艺环阵背偏电压对输出频率的影响
Figure 5. Output frequency response to back bias voltage of 22 nm FDSOI RO
图 6 28 nm体硅CMOS工艺环阵体偏电压对工作电流的影响
Figure 6. Operating current response to body bias voltage of 28 nm bulk CMOS RO
图 7 22 nm FDSOI工艺环阵背偏电压对工作电流的影响
Figure 7. Operating current response to back bias voltage of 22 nm FDSOI RO
图 9 22 nm FDSOI工艺环阵输出频率仿真和实测对比
Figure 9. Comparison of output frequency of 22 nm FDSOI RO between simulation and test
表 1 2种工艺环阵的输出频率对比
Table 1. Comparison of output frequency of RO between two processes
MHz 工艺环阵 最小值 正常值 最大值 28nm体硅CMOS 92.8 120 127 22nm FDSOI 57.8 158 206 
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表 2 2种工艺环阵的静态电流对比
Table 2. Comparison of standby current of RO between two processes
A 工艺环阵 最小值 正常值 最大值 28 nm体硅CMOS 1.70×10-8 2.34×10-7 1.26×10-6 22 nm FDSOI 1.33×10-9 2.99×10-9 5.34×10-9
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表 3 2种工艺环阵的工作电流对比
Table 3. Comparison of operating current of RO between two processes
A 工艺环阵 最小值 正常值 最大值 28nm体硅CMOS 6.78×10-5 1.01×10-4 1.29×10-4 22nm FDSOI 2.44×10-5 7.03×10-5 9.04×10-5
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表 4 22 nm FDSOI工艺环阵输出频率仿真与实测对比
Table 4. Comparison of output frequency of 22 nm FDSOI RO between simulation and test
背偏电压/V 输出频率/MHz 仿真值 实测值 (0, 0) 158 154 (+1, 0) 177 175 (+1, -1) 201 193 (+2, 0) 205 195 (+2, -2) 255 239
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