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摘要:
激光管内产生的热流对结构固有特性的影响是窄线宽半导体激光器结构设计的重点研究问题之一。基于机械性能和温度载荷要求，以整体结构散热最大化为目标，对内部热载荷进行了分析与应用研究，并以此为依据对半导体激光器的结构尺寸与结构形式进行了优化设计，该方法使激光器整体温度最大值由24.6℃降至22.827℃，并且分析了前100 s内瞬态温度变化曲线，通过优化结构使得散热均匀性得到很好的改善。
Abstract:The influence of the heat flow generated in the laser tube on the inherent characteristics of the structure is one of the key research issues in the design of narrow linewidth semiconductor lasers. Based on the mechanical properties and temperature load requirements, this paper aims at maximizing the heat dissipation of the overall structure. The internal thermal load is analyzed and applied. Based on this, the structural size and structural forms of the semiconductor laser are optimized. The method reduces the maximum temperature of the laser from 24.6℃ to 22.827℃, and analyzes the transient temperature curve in the first 100 s. The heat dissipation uniformity is improved by optimizing the structure.
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图 2 用于有限元分析的半导体激光器简化模型
Figure 2. Simplified model of semiconductor laser for finite element analysis
图 3 网格质量为0.5在整体结构中对应的位置
Figure 3. Position in overall structure with mesh metric of 0.5
图 4 网格质量低于0.7在整体结构中对应的所有位置
Figure 4. All positions in overall structure with mesh metric under 0.7
图 6 半导体激光器结构温度场分布云图
Figure 6. Contour of temperature field distribution of semiconductor laser structure
图 8 机械安装模块与底座瞬态温度变化
Figure 8. Transient temperature change of mechanical installation module and base
图 9 结构尺寸优化后的半导体激光器装配模型
Figure 9. Assembly model of semiconductor laser after structural size optimization
图 10 结构尺寸优化后的稳态温度分布云图
Figure 10. Contour of steady-state temperature distribution after structural size optimization
图 11 结构形式优化后的半导体激光器装配模型
Figure 11. Assembly model of semiconductor laser after structural form optimization
图 12 结构形式优化后的稳态温度分布云图
Figure 12. Contour of steady-state temperature distribution after structural form optimization
图 13 结构尺寸优化方案与结构形式优化方案在前100 s内的瞬态温度变化
Figure 13. Transient temperature change of structural size optimization scheme and structural form optimization scheme in the first 100 s
图 14 结构形式优化后的结构在实验室环境下前100 s内的温度变化
Figure 14. Temperature change of optimized structural form in laboratory environment in the first 100 s
材料 弹性模量E/(1010Pa) 泊松比 密度ρ/(kg·m-3) 导热系数/(W·(m·K)-1) 黄铜 10.6 0.324 8 500 108.9 紫铜 12.0 0.320 8 930 386.4 亚克力 0.3 0.320 1 190 0.19~0.40 
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表 2 半导体激光器有限元网格划分
Table 2. Finite element meshing of semiconductor laser
名称 节点 单元 整体结构 136 361 90 557 底座 20 059 13 188 激光准直模块 39 489 25 104 机械安装模块 49 277 32 078 外壳 27 536 14 513
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