0.13 μm部分耗尽SOI工艺反相器链SET脉宽传播

上官士鹏; 朱翔; 陈睿; 马英起; 李赛; 韩建伟

doi:10.13700/j.bh.1001-5965.2019.0076

0.13 μm部分耗尽SOI工艺反相器链SET脉宽传播

doi: 10.13700/j.bh.1001-5965.2019.0076

上官士鹏^{1, 2, ,},
朱翔^{1, 2},
陈睿¹,
马英起¹,
李赛^{1, 2},
韩建伟¹

1.
中国科学院国家空间科学中心, 北京 100190
2.
中国科学院大学, 北京 100049

基金项目:

国家自然科学基金 11875060

中国科学院重点部署项目 61501050302A

详细信息

作者简介:
上官士鹏  男, 博士, 助理研究员。主要研究方向:半导体器件空间环境效应

朱翔  男, 博士, 助理研究员。主要研究方向:半导体器件空间环境效应

陈睿  男, 博士, 副研究员。主要研究方向:半导体器件空间环境效应

马英起  男, 博士, 副研究员。主要研究方向:半导体器件空间环境效应

李赛  女, 博士研究生。主要研究方向:半导体器件空间环境效应

韩建伟  男, 博士, 研究员。主要研究方向:核物理

通讯作者:
上官士鹏.E-mail:shangguansp@nssc.ac.cn

中图分类号: V221⁺.3;TB553
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- 被引次数: 0
出版历程
- 收稿日期: 2019-03-01
- 录用日期: 2019-05-27
- 网络出版日期: 2019-11-20

Single event transient pulse width transmission of 0.13 μm partial depleted SOI process DFF

SHANGGUAN Shipeng^{1, 2
, ,},
ZHU Xiang^{1, 2},
CHEN Rui¹,
MA Yingqi¹,
LI Sai^{1, 2},
HAN Jianwei¹

1.
National Space Science Centre, Chinese Academy of Sciences, Beijing 100190, China
2.
University of Chinese Academy of Sciences, Beijing 100049, China

Funds:

National Natural Science Foundation of China 11875060

Key Research Program of the Chinese Academy of Sciences 61501050302A

More Information

Corresponding author: SHANGGUAN Shipeng.E-mail:shangguansp@nssc.ac.cn

摘要

摘要:
基于0.13 μm部分耗尽绝缘体上硅（PD-SOI）工艺，设计了一款片上反相器链（DFF）单粒子瞬态（SET）脉宽测试电路并流片实现，SET脉宽测试范围为105~3 150 ps，精度为±52.5 ps。利用重离子加速器和脉冲激光模拟单粒子效应试验装置对器件进行了SET脉宽试验。采用线性能量传输（LET值）为37.6 MeV·cm²/mg的⁸⁶Kr离子触发了反相器链的三级脉宽传播，利用脉冲激光正面测试器件触发了相同级数的脉宽，同时，激光能量值为5 500 pJ时触发了反相器链的双极放大效应，脉宽展宽32.4%。通过对比激光与重离子的试验结果，以及明确激光到达有源区的有效能量的影响因子，建立了激光有效能量与重离子LET值的对应关系，分析了两者对应关系偏差的原因。研究结果可为其他种类芯片单粒子效应试验建立激光有效能量与重离子LET值的对应关系提供参考。
- 部分耗尽绝缘体上硅(PD-SOI) /
- 重离子加速器 /
- 脉冲激光 /
- 有效能量 /
- 脉冲宽度 /
- 双极放大
Abstract:
Based on 0.13 μm partial depleted silicon-on-insulator (PD-SOI) process, a delay flip-flop (DFF) has been designed for single event transient (SET) pulse width, with the pulse width test range between 105 ps to 3 150 ps and the precision being ±52.5 ps. The DFF has been tested by heavy ion accelerator and pulsed laser single event effect facility. ⁸⁶Kr ion with linear energy transfer (LET) equal 37.6 MeV·cm²/mg was chosen to obtain a DFF 3 level SET pulse width, and pulsed laser triggered the same pulse width by front-side testing. By using 5 500 pJ laser energy, the bipolar amplification of DFF has been triggered, and the pulse width is amplified by 32.3%. According to the same SET pulse width, a method for estimating the pulsed laser energy reaching to the active area of chips which is also called effective energy is established. Meanwhile, based on the experimental results, the relationship between effective energy and LET was also established, and the deviations between the two methods were also analyzed. Other kinds of chips can also use this method to establish the relationship between laser energy and LET.
- partial depleted silicon-on-insulator (PD-SOI) /
- heavy ion accelerator /
- pulsed laser /
- effective energy /
- pulse width /
- bipolar amplification

HTML全文

图 1 SET脉宽传播示意图

Figure 1. Schematic diagram of SET pulse width transmission

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图 2 异步锁存器测试SET原理

Figure 2. Principle of asynchronous latch testing SET

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图 3 异步锁存器测试SET脉宽

Figure 3. Pulse width of asynchronous latch testing SET

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图 4 0.13 μm PD-SOI CMOS反相器链芯片版图

Figure 4. Chip layout of 0.13 μm PD-SOI CMOS DFF

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图 5 脉冲激光正面测试反相器链

Figure 5. Pulsed laser testing DFF by front side

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图 6 激光有效能量与反相器链SET脉宽关系

Figure 6. Relationship between laser effective energy and DFF SET pulse width

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图 7 1 064 nm波长激光随钝化层厚度的能量透射率变化曲线

Figure 7. Variation of energy transmittance of 1 064 nm laser with passivation layer thickness

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表 1 粒子辐照条件

Table 1. Particle irradiation condition

参数能量/MeV LET/(MeV· cm²·mg^-1) 硅中射射程/μm 束流强度(均值)/ (cm²·s^-1)

数值 479.8 37.6 59 1.0×10⁴

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表 2 ⁸⁶Kr离子测试反相器链SET脉宽值

Table 2. SET testing pulse width values of DFF by ⁸⁶Kr ion

脉宽/ps 翻转次数

210 2

420 2

525 3

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参考文献(17)

[1]	EL-MAMOUNI F, ZHANG E X, PATE N D, et al.Laser-and heavy ion-induced charge collection in bulk FinFETs[J]. IEEE Transactions on Nuclear Science, 2011, 58(6):2563-2569. doi: 10.1109/TNS.2011.2171994
[2]	FERLET-CAVROIS V, MCMORROW D, KOBAYASHI D, et al.A new technique for SET pulse width measurement in chains of inverters using pulsed laser irradiation[J].IEEE Transactions on Nuclear Science, 2009, 56(4):2014-2020. doi: 10.1109/TNS.2009.2017374
[3]	MUSSEAU O, FERLET-CAVROIS V, PELLOIE J L, et al.Laser probing of bipolar amplification in 0.25μm MOS/SOI transistors[J].IEEE Transactions on Nuclear Science, 2000, 47(6): 2196-2203. https://www.researchgate.net/publication/3137163_Laser_probing_of_bipolar_amplification_in_025-m_MOSSOI_transistors
[4]	赵星, 梅博, 毕津顺, 等.0.18μm部分耗尽绝缘体上硅互补金属氧化物半导体电路单粒子瞬态特性研究[J].物理学报, 2015, 64(13):136102. doi: 10.7498/aps.64.136102 ZHAO X, MEI B, BI J S, et al.Single event transients in a 0.18 μm partially-depleted silicon-on-insulator complementary metal oxide semiconductor circuit[J].Acta Physica Sinica, 2015, 64(13):136102(in Chinese). doi: 10.7498/aps.64.136102
[5]	CHEN R M, ZHANG F Q, CHEN W, et al.Single-event multiple transients in conventional and guard-ring hardened inverter chains under pulsed laser and heavy-ion irradiation[J].IEEE Transactions on Nuclear Science, 2017, 64(9):2511-2518. doi: 10.1109/TNS.2017.2738646
[6]	WU Z Y, CHEN S M, CHEN J J, et al.Impacts of proton radiation on heavy ion-induced single event transients in 65 nm CMOS technology[J].IEEE Transactions on Nuclear Science, 2019, 66(1):177-183. http://cn.bing.com/academic/profile?id=22c9e366ef077ca64eb4be36c0cda32c&encoded=0&v=paper_preview&mkt=zh-cn
[7]	GADLAGE M J, AHLBIN J R, NARASIMHAM B, et al.Scaling trends in SET pulse widths in sub-100 nm bulk CMOS processes[J].IEEE Transactions on Nuclear Science, 2010, 57(6):3336-3341. http://www.wanfangdata.com.cn/details/detail.do?_type=perio&id=2613b691bba6e8a44e33a6b03f38e11f
[8]	FERLET-CAVROIS V, POUGET V, MCMORROW D, et al.Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains[J].IEEE Transactions on Nuclear Science, 2008, 55(6):2842-2853. doi: 10.1109/TNS.2008.2007724
[9]	毕津顺, 刘刚, 罗家俊, 等.22 nm工艺超薄体全耗尽绝缘体上硅晶体管单粒子瞬态效应研究[J].物理学报, 2013, 62(20):208501. doi: 10.7498/aps.62.208501 BI J S, LIU G, LUO J J, et al.Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node[J].Acta Physica Sinica, 2013, 62(20):208501(in Chinese). doi: 10.7498/aps.62.208501
[10]	吴驰, 毕津顺, 李博, 等.PDSOI工艺下单粒子瞬态脉冲宽度分析[J].太赫兹科学与电子信息学报, 2016, 14(6):977-981. http://d.old.wanfangdata.com.cn/Periodical/xxydzgc201606030 WU C, BI J S, LI B, et al.Analysis of single-event transient pulse width in PDSOI[J].Journal of Terahertz Science and Electronic Information Technology, 2016, 14(6):977-981(in Chinese). http://d.old.wanfangdata.com.cn/Periodical/xxydzgc201606030
[11]	MA Y Q, HAN J W, FENG G Q, et al.Metallic layers reflections effects on the correlation of laser effective energy and heavy-ion LET for SEL testing[C]//IEEE Radiation Effects on Components and Systems (RADECS).Piscataway, NJ: IEEE Press, 2016: 1-6.
[12]	余永涛.脉冲激光模拟SRAM单粒子效应的试验研究[D].北京: 中国科学院大学, 2015. http://cdmd.cnki.com.cn/Article/CDMD-80073-1015351170.htm YU Y T.Research of SRAM single event effects based on pulsed laser testing[D].Beijing: University of Chinese Academy of Sciences, 2015(in Chinese). http://cdmd.cnki.com.cn/Article/CDMD-80073-1015351170.htm
[13]	刘红侠, 卓青青.线性能量传输值对SOI NMOS寄生双极放大效应的影响[EB/OL].(2013-12-23)[2018-12-23].http://www.paper.edu.cn/releasepaper/content/201312-697. LIU H X, ZHUO Q Q.Influence of linear energy transfer on the parasitic bipolar amplification effect of SOI[EB/OL].(2013-12-23)[2018-12-23].http://www.paper.edu.cn/releasepaper/content/201312-697(in Chinese).
[14]	刘征, 陈书明, 梁斌, 等.单粒子瞬变中的双极放大效应研究[J].物理学报, 2010, 59(1):649-654. http://d.old.wanfangdata.com.cn/Periodical/wlxb201001106 LIU Z, CHEN S M, LIANG B, et al.Research of bipolar amplification effect in single event transient[J].Acta Physica Sinica, 2010, 59(1):649-654(in Chinese). http://d.old.wanfangdata.com.cn/Periodical/wlxb201001106
[15]	黄建国, 韩建伟.脉冲激光模拟单粒子效应的等效LET计算[J].中国科学G辑:物理学、力学、天文学, 2004, 34(6):601-609. http://d.old.wanfangdata.com.cn/Periodical/zgkx-cg200406001 HUANG J G, HAN J W.Calculation of equivalent LET for pulsed laser simulating SEE[J].Science in China Series G:Physics, Mechanics & Astronomy, 2004, 34(6):601-609(in Chinese). http://d.old.wanfangdata.com.cn/Periodical/zgkx-cg200406001
[16]	MELINGER J, BUCHNER S, MCMORROW D, et al.Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies[J].IEEE Transactions on Nuclear Science, 1994, 41(6):2574-2584. doi: 10.1109/23.340618
[17]	ZHANG L Q, XU J L, FAN S.Single event upset sensitivity of D-flip flop:Comparison of PDSOI with bulk Si at 130 nm technology node[J].IEEE Transactions on Nuclear Science, 2017, 64(1):683-688. doi: 10.1109/TNS.2016.2636338