Conducted electromagnetic interference of wireless charging system with bilateral LCC of electric vehicle
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摘要:
对电动汽车双边LCC拓扑结构无线充电系统传导电磁干扰进行研究,依据标准SAE J2954构建了3.7 kW的无线充电系统传导电磁干扰高频电路模型,采用测量和理论计算结合的方法,提取耦合线圈、线缆和补偿电路元件的高频寄生参数。利用软件ANSYS Maxwell和Simplorer进行系统传导干扰建模仿真分析,通过仿真结果可以看出,在150 kHz~30 MHz频段共模干扰比差模干扰显著。通过系统传导发射试验验证了仿真模型的准确性。
Abstract:The conducted electromagnetic interference of the wireless charging system with the bilateral LCC structure of electric vehicles is studied. According to the standard SAE J2954, a high-frequency circuit model of the conducted electromagnetic interference of the wireless charging system with a power of 3.7 kW is constructed. A method combining measurement and theoretical calculation is used to extract the high-frequency parasitic parameters of the coupling coil, cable and compensation circuit components. The modeling and simulation analysis of the conducted interference of the system are carried out by using the software ANSYS Maxwell and Simplorer. Simulation results show that the common mode interference is more significant than the differential mode interference in the frequency band of 150 kHz-30 MHz. The accuracy of the simulation model is verified by the conducted emission experiment of the wireless charging system.
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表 1 无线充电系统的设计指标
Table 1. Design specifications of wireless charger
指标 数值 输入电网电压Uac/V 220 输入电网电压频率f1/Hz 50 PFC输出直流电压Uin/V 260~425 输出充电电压Ub/V 300~400 工作频率f/kHz 81.38~90 最大功率P/kW 3.7 表 2 电路元件参数
Table 2. Circuit element parameters
元件名称 元件参数或选型 整流二极管 VS-80APS12-M3 PFC升压电感LPFC 500 μH PFC电容CPFC 1 500 μF/600 V PFC二极管 IDW40G65C5SKSA1 逆变功率开关MOSFET IPW65R048CFDA 逆变续流二极管 IDW10G120C5BFKSA7 次级侧滤波电容Co 66 μF/650 V 次级侧滤波电感Lo 158 μH 表 3 耦合线圈参数
Table 3. Coupling coil parameters
参数 选型式数值 绕线选型 800股利兹线 绕线材料 II(16AWG4*5X24/36) 绕线直径/mm 3.9 线圈外半径/mm 300 线圈内半径/mm 150 匝数 16 线圈耦合系数 0.352 5 表 4 铁氧体设计参数
Table 4. Design parameters of ferrite
参数 数值 单位铁氧体尺寸/(mm×mm×mm) 60×15×9 长条铁氧体尺寸/(mm×mm×mm) 240×15×9 短条铁氧体尺寸/(mm×mm×mm) 180×15×9 长条铁氧体数量 18 短条铁氧体数量 18 铁氧体排列夹角/(°) 10 表 5 MOSFET基本特性参数
Table 5. Basic characteristic parameters of MOSFET
参数 数值 漏源电压/V 700 漏源导通电阻/Ω 0.099 栅极电荷/nC 127 连续漏极电流/A 115 输出能量/μJ 10 体二极管的电流变化率/(A·μs-1) 300 表 6 各元件电气参数和寄生参数
Table 6. Electrical parameters and parasitic parameters of each component
参数 数值 补偿电感L1、L2/μH 68.96 补偿电感寄生电容CL1、CL2/pH 61.20 补偿电感寄生电阻RL1、RL2/mΩ 463.11 补偿电容C1、C2/nF 52.28 补偿电容寄生电感LC1、LC2/nH 364.06 补偿电容寄生电阻RC1、RC2/mΩ 647.05 补偿电容Cp、Cs/nF 19.97 补偿电容寄生电感LCp、LCs/nH 378.18 补偿电容寄生电阻RCp、RCs/mΩ 420.61 正极线缆寄生电感Lcable1/3/μH 1.96 正极线缆寄生电阻Rcable1/3/mΩ 45.33 正极线缆寄生电容Ccable1/3/pF 69.44 负极线缆寄生电感Lcable2/4/μH 1.88 负极线缆寄生电阻Rcable2/4/mΩ 31.64 负极线缆寄生电容Ccable2/4/pF 70.46 线圈电感Lp、Ls/μH 218.81 线圈电感寄生电阻RLp、RLs/mΩ 205.72 线圈对地寄生电容CLp、CLs/nF 3.63 线圈间寄生电容Cps/nF 21.42 -
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