Study of transistor steady-state operation life test by method of controllable junction temperature
-
摘要: 在分析了现行标准中晶体管稳态工作寿命试验方法存在问题的基础上,认为在现行的稳态工作寿命试验中没有对晶体管的结温实施测量和控制,是导致试验结果不准确的重要原因.旨在提高晶体管稳态工作寿命试验方法的可信度,提出了一种在试验过程中实时测量并严格控制晶体管结温在最高允许结温附近的稳态工作寿命试验方法.以3DD820,3DD15D (F2金属封装)双极晶体管为实验对象,对结温可控的晶体管稳态工作寿命试验方法进行了验证.模拟试验数据分析结果表明,该试验方法可以有效地提高晶体管稳态工作寿命试验方法的可信度.Abstract: Analyzing the various problems of current steady-state operation life test standard, it is pointed out that, not measuring and controlling, transistor junction temperature in current transistor steady-state operation life test can lead to fatal inaccuracy of the test results. To increase the accuracy of the test method, a steady-state operation life test method with additional measuring and strictly controlling transistor junction temperature, in the highest temperature range, is given. Bipolar transistors of the type of 3DD820 and 3DD15D (with F2 metal-pack) are taken as an example in the study to verify the method of controllable junction temperature. Analyzing result of simulated experiment data shows that the test method can increase availably the accuracy of the transistor steady-state operation life test method.
-
Key words:
- transistors /
- life tests /
- credibility
-
[1] MIL-STD-750D,半导体器件试验方法[S].1995 MIL-STD-750D,Test methods for semiconductor[S].1995(in Chinese) [2] GJB33A-97,半导体器件总规范[S].1997 GJB33A-97,General requirements for semiconductor diceces[S].1997(in Chinese) [3] GJB128A-97,半导体分立器件试验方法[S].1997 GJB128A-97,Test methods for semiconductor discrete devices[S].1997(in Chinese) [4] 卢其庆,张安康.半导体器件可靠性与失效分析[M]. 江苏:江苏科学技术出版社,1981 Lu Qiqing,Zhang Ankang. Dependency and failure analyse for semiconductor devices[M].Jiangsu:Jiangsu Science and Technique Press,1981(in Chinese) [5] 刘 永,张福海.晶体管原理[M].北京:国防工业出版社,2002 Liu Yong,Zhang Fuhai. Transistor principle[M].Beijing:Defence Industry Press,2002 (in Chinese) [6] 施 敏.现代半导体器件物理[M].北京:科学出版社,2001.11~26 Shi Min. Modern semiconductor device physics[M].Beijing:Science Press,2001.11~26(in Chinese) [7] Dale E Dawson, Aditya K Gupta. Measurement of HBT thermal resistance[J]. IEEE Trances Action on Electron Devices,1992,39(10):2235~2239 [8] Fields C H,Foschaar J,Thomas S. Thermal resistance characterization of 200 GHz F InGaAs/InAlAs HBTs. IPRM.14th. 2002.79~82 [9] Webb P W. Measurement of thermal resistance using electrical methods[J].IEE Proceeding,1987,34(2):51~56 [10] Chan-Su Yun,Peter Regli.Static and dynamic thermal characteristics of IGBT power modules. Power Semiconductor Devices and Ics. ISPSD'99 Proceeding,the 11th International Symposim on. 1999.37~40
点击查看大图
计量
- 文章访问数: 2943
- HTML全文浏览量: 172
- PDF下载量: 338
- 被引次数: 0