MOCVD法制备一维氧化物阵列材料

张跃; 袁洪涛; 程进; 宋强

MOCVD法制备一维氧化物阵列材料

北京航空航天大学材料科学与工程学院北京 100083

基金项目: 国家自然科学基金资助项目(50172002)

详细信息

中图分类号: TB 34
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出版历程
- 收稿日期: 2004-04-28
- 网络出版日期: 2004-10-31

Array materials of one-dimensional oxides prepared by MOCVD method

School of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics, Beijing 100083, China

摘要

摘要: 介绍了一种新型的大气开放式金属有机物化学气相沉积(MOCVD)系统的结构及其新特点;以ZnO纳米棒阵列材料的制备为例,说明了大气开放式MOCVD法制备氧化物阵列材料的方法,并对氧化物阵列材料的制备过程进行了论述;扫描电镜研究发现这些取向生长的氧化物一维材料均垂直于基片沿某一方向生长,并且排列非常规整,具有无晶界、晶体缺陷少、体表面积小和具有特殊的尖端等特点;介绍了制备VO_x,FeO_x,TiO₂等一元金属氧化物和ZnAlO,ZnMgO等多元掺杂金属氧化物的一维阵列材料的方法.
- 化学汽相沉积 /
- 氧化物 /
- 一维材料 /
- 阵列材料
Abstract: The structure and the new features of a new-type atmospheric metal organic chemical vapor deposition (MOCVD) system were introduced. The atmospheric MOCVD method was introduced to prepare array materials of oxides by the example of preparing array material of ZnO nanorods. The preparing process of oxide array materials was discussed in detail. SEM experiments showed that all these tropistic growing materials of one-dimensional oxides grew in a certain direction perpendicular to the substrates and well aligned. These one-dimensional materials are characterized of no crystal boundaries, few crystal defects, little superficial area and special tips. How to make all kinds of array materials of one-element metal oxides (such as VO_x, FeO_x, TiO₂, etc.) and doped multi-element metal oxides (such as ZnAlO,ZnMgO, etc.) was introduced.
- chemical vapour deposition /
- oxides /
- one-dimensional material /
- array material

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参考文献(1)

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