电离辐射对部分耗尽SOI器件关态电流的影响

恩云飞; 刘远; 何玉娟

电离辐射对部分耗尽SOI器件关态电流的影响

1.
西安电子科技大学微电子学院, 西安 710071
2. 电子元器件可靠性物理及其应用技术重点实验室, 广州 510610

基金项目: 国家自然科学基金资助项目(61204112); 中国博士后科学基金资助项目(2012M521628)

详细信息

中图分类号: TN386
计量
- 文章访问数: 1471
- HTML全文浏览量: 60
- PDF下载量: 701
- 被引次数: 0
出版历程
- 收稿日期: 2013-01-17
- 修回日期: 2013-05-07
- 网络出版日期: 2013-05-31

Total dose dependence of off currents in the irradiated PD-SOI devices

1.
School of Microelectronic, Xidian University, Xi'an 710071, China
2. Science and Technology on Reliability Physics and Application of Electric Component Laboratory, Guangzhou 510610, China

摘要

摘要: 针对辐射前后环栅与条栅结构部分耗尽绝缘体上硅(SOI,Silicon On Insulator)器件关态电流的变化展开实验,研究结果表明辐射诱使关态电流增加主要取决于侧壁泄漏电流、背栅寄生晶体管导通、带-带隧穿与背栅泄漏电流的耦合效应.在条栅结构器件中,辐射诱生场氧化层固定电荷将使得器件侧壁泄漏电流增加,器件前、背栅关态电流随总剂量变化明显;在环栅结构器件中,辐射诱使背栅晶体管开启将使得前栅器件关态电流变大,而带-带隧穿与背栅泄漏电流的耦合效应将使得器件关态电流随前栅电压减小而迅速增加.基于以上结果,可通过改良版图结构以提高SOI器件的抗总剂量电离辐射能力.
- 绝缘体上硅 /
- 部分耗尽 /
- 关态电流 /
- 电离辐射
Abstract: Total dose dependence of off currents in the partially depleted SOI devices with standard and enclosed gate structures was presented. The experimental results show that increases in the radiation induced off current are result from the effect of trench sidewall leakage, the conduction of back gate parasitic transistor and the coupling effect of band-to-band tunneling and back gate leakage currents. In the standard structures, trench sidewall leakages are increased by the positive charge trapping in the field oxide, thus the off currents in the front and back gate is increased significantly. In the enclosed gate structures, increases in the off current are more caused by the conduction of back gate parasitic transistors and the drain current dependence on total dose at negative gate-source voltage are caused by the coupling effects of band-to-band tunneling and back gate leakage currents. These results can be used for hardness assurance by improving of device layout structures.
- Silicon on insulator /
- partially depleted /
- off current /
- ionizing radiation

HTML全文

参考文献(12)

[1]	Schwank J R,Ferlet-Cavrois V,Shaneyfelt M R,et al.Radiation effects in SOI technologies[J].IEEE Transactions on Nuclear Science,2003,50(3):522-538
[2]	Barnaby H J.Total ionizing dose effects in modern CMOS technologies[J].IEEE Transactions on Nuclear Science,2006, 53(6): 3103-3121
[3]	Schwank J R,Shaneyfelt M R,Fleetwood M,et al.Radiation effects in MOS oxides[J].IEEE Transactions on Nuclear Science,2008,55(4):1833-1853
[4]	Schwank J R,Shaneyfelt M R,Dodd P E.New insights into fully depleted SOI transistor response after total dose irradiation[J].IEEE Transactions on Nuclear Science,2000,47(3):604-612
[5]	Adell P C,Barnaby H J,Schrimpf R D,et al.Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices[J].IEEE Transactions on Nuclear Science,2007,54(6):2174-2180
[6]	Esqueda I S,Barnaby H J,McLain M,et al.Modeling the radiation response of fully depleted SOI n-channel MOSFETs[J].IEEE Transactions on Nuclear Science,2009,56(4):2247-2250
[7]	Tian H,Zhang Z X,He W,et al.Total dose radiation effects on SOI NMOS transistors with different layouts[J].Chinese Physics C,2008,32(8):645-648
[8]	Liu J,Zhou J C,Luo H W,et al.Total-dose-induced edge effect in SOI NMOS transistors with different layouts[J].Microelectronics Reliability,2011,50(1):45-47
[9]	Hurkx G M,Klaasen D M,Knuvers M G.A new combination model for device simulation including tunneling[J].IEEE Transactions on Electron Devices,1992,39(2):331-338
[10]	Ferlet-Cavrois V,Quoizola S,Musseau O,et al.Total dose induced latch in short channel NMOS/SOI transistors[J].IEEE Transactions on Nuclear Science,1998,45(6):2458-2465
[11]	Lim H K,Fossum J G.Threshold voltage of thin film silicon on insulator (SOI) MOSFETs[J].IEEE Transactions on Electron Devices,1983,30(10):1244-1251
[12]	MaLain M,Barnaby H J,Adell P C.Analytical model of radiation response in FDSOI MOSFETs[C] // International Reliability Physics Symposium.Phoenix,USA:IEEE,2008:643-644