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一种超低压超低耗NMOS衬底偏置混频器

宋 丹 张晓林

宋 丹, 张晓林. 一种超低压超低耗NMOS衬底偏置混频器[J]. 北京航空航天大学学报, 2009, 35(4): 480-484.
引用本文: 宋 丹, 张晓林. 一种超低压超低耗NMOS衬底偏置混频器[J]. 北京航空航天大学学报, 2009, 35(4): 480-484.
Song Dan, Zhang Xiaolin. Ultra-low voltage ultra-low power NMOS bulk-biased mixer[J]. Journal of Beijing University of Aeronautics and Astronautics, 2009, 35(4): 480-484. (in Chinese)
Citation: Song Dan, Zhang Xiaolin. Ultra-low voltage ultra-low power NMOS bulk-biased mixer[J]. Journal of Beijing University of Aeronautics and Astronautics, 2009, 35(4): 480-484. (in Chinese)

一种超低压超低耗NMOS衬底偏置混频器

基金项目: 国防科工委民用航天专项基金资助项目
详细信息
    作者简介:

    宋 丹(1983-),女,辽宁沈阳人,博士生,buaasd@ee.buaa.edu.cn.

  • 中图分类号: TN 47

Ultra-low voltage ultra-low power NMOS bulk-biased mixer

  • 摘要: 使用两对NMOS管和衬底偏置技术,采用SMIC 0.18μm CMOS工艺,为卫星导航双系统兼容接收机的射频集成电路芯片设计了一种超低压、超低耗NMOS衬底偏置混频器(NBBM,NMOS Bulk-Biased Mixer).以其中的GPS系统为例:射频信号、本振信号和中频信号分别为1575.42MHz,1570MHz和5.42MHz.测试表明:在1V电源电压下,驱动差分负载阻抗1000Ω时,混频器消耗电流约为1.37mA,变频增益( GC )超过2.11dB,输入1dB压缩点( P in-1dB)约为-13dBm;若加入运放驱动,变频增益可超过14dB,但会带来线性度的降低、功耗以及面积的增加.

     

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出版历程
  • 收稿日期:  2008-04-22
  • 网络出版日期:  2009-04-30

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