直流磁控溅射ZnO:Al薄膜的光电和红外发射特性

王文文; 刁训刚; 王峥; 王天民

直流磁控溅射ZnO:Al薄膜的光电和红外发射特性

北京航空航天大学理学院, 北京 100083

详细信息

作者简介:
王文文(1980-),女,山东临沂人,博士生, wangww1016@163.com.

中图分类号: O 472⁺1; O 472⁺3; O 472⁺4
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- 被引次数: 0
出版历程
- 收稿日期: 2004-06-20
- 网络出版日期: 2005-02-28

Optical, electrical and infrared emissing properties of DC magnetron sputtered ZnO:Al thin films

School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083, China

摘要

摘要: 以锌、铝合金(ω(Al)=3%)为靶材,利用直流反应磁控溅射法制备了系列掺铝氧化锌ZnO:Al(ZAO)薄膜样品,通过X射线衍射(XRD)、扫描电子显微镜(SEM)、分光光度计、霍耳效应及红外发射率测量仪等测试仪器或方法表征了样品的结构、形貌、光学、电学及红外发射特性.测得样品最低电阻率达到1.8×10^-6(Ω·m),最大禁带宽度为3.47 eV,可见光区平均透过率达到90%,8~14 μm波段平均红外发射率在0.26~0.9之间.上述特性均随衬底温度和溅射功率的变化有着规律的变化.当方块电阻小于45 Ω时,薄膜在8~14 μm波段平均红外发射率与方块电阻遵循二阶函数变化规律.
- 透明导电薄膜 /
- 磁控溅射 /
- ZnO:Al薄膜 /
- 方块电阻 /
- 禁带宽度 /
- 红外发射率
Abstract: Aluminium-doped zinc oxide (ZnO:Al) films were deposited on glass substrate by DC reactive magnetron sputtering from a Zn-Al metallic target (ω(Al)=3%). Films with novel, tangly string-like surface morphology, an average optical transmittance up to 90% in the visible range, a widest band gap of 3.47 eV and electrical resistivity down to 1.80×10^-6 Ω·m were obtained. The infrared emissivity in 8~14 μm waveband is distributed in the range of 0.26~0.9. The surface morphology, crystallinity, infrared emissivity as well as the electrical and optical properties of the samples were characterized using X-ray diffraction, scanning electron microscopy, spectrophotometry, infrared radiometer and Hall-effect measurement. The optical, electrical and infrared emissing properties of the films depend on substrate temperature and sputtering power obviously and regularly. The relationship between sheet resistance and infrared emissivity of ZnO:Al(ZAO) thin films follows a quadratic function as the sheet resistance is below 45 Ω.
- transparent conductive oxides thin films /
- magnetron sputtering /
- ZnO:Al thin films /
- sheet resistance /
- forbidden bands /
- infrared emissivity

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