Fabrication of SIMOS/SOI CMOS IC-s
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摘要: 研究SOI-SIMOX(Silicon On Insulation-Separation by Implanted Oxygen)材料及SIMOX-CMOS器件.高能大剂量(170keV,1.5×1018/cm2)氧离子注入到P型(100)单晶Si衬底,再经高温长时间(1300℃,6h)退火,形成SIMOX结构材料.经测试,SIMOX表层单晶硅膜反型为N型,研究表明,这是由于在制备SIMOX的工艺中,残留在SIMOX表层硅膜内的氧离子起施主作用所致,并计算出氧杂质在硅中的施主电离能,其值为0.15eV.采用SIMOX材料研制了MOSFET及CMOS三3输入端与非门电路,并介绍了研制SIMOX-CMOS器件的主要工艺.Abstract: SOI-SIMOX(Silicon On Insulator-Separation by Implanted Oxygen) materials were formed by large dose(1.5×1018/cm2) oxygen ion implantation into p-type (100) Si wafers at energy of 170keV and annealing in nitrogen at 1300℃ for 6 h.The carriers in the top silicon layers of the SIMOX are reversed from P-type into N-type.The reversion is resulted from the residual oxygen atoms in the top Si layers,which play the role of donors and over-compensate the acceptors in the virgin p-type Si.The oxygen donor ionization energy is 0.15eV.The MOSFET-s and CMOS triple 3-input NAND gate circuits(CC4023) were fabricated on SIMOS/SOI materials.The CMOS/SIMOX process is briefly introduced.
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Key words:
- semiconductor materials /
- semiconductor devices /
- "AND"-"NOT" circuits /
- SOI /
- SIMOX /
- CMOS
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