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CMOS器件单粒子效应电荷收集机理

董刚 封国强 陈睿 韩建伟

董刚, 封国强, 陈睿, 等 . CMOS器件单粒子效应电荷收集机理[J]. 北京航空航天大学学报, 2014, 40(6): 839-843. doi: 10.13700/j.bh.1001-5965.2013.0435
引用本文: 董刚, 封国强, 陈睿, 等 . CMOS器件单粒子效应电荷收集机理[J]. 北京航空航天大学学报, 2014, 40(6): 839-843. doi: 10.13700/j.bh.1001-5965.2013.0435
Dong Gang, Feng Guoqiang, Chen Rui, et al. Single event charge collection in CMOS device[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(6): 839-843. doi: 10.13700/j.bh.1001-5965.2013.0435(in Chinese)
Citation: Dong Gang, Feng Guoqiang, Chen Rui, et al. Single event charge collection in CMOS device[J]. Journal of Beijing University of Aeronautics and Astronautics, 2014, 40(6): 839-843. doi: 10.13700/j.bh.1001-5965.2013.0435(in Chinese)

CMOS器件单粒子效应电荷收集机理

doi: 10.13700/j.bh.1001-5965.2013.0435
基金项目: 

中国科学院支撑技术资助项目(110161501038);中国科学院国家空间科学中心重点培育课题资助项目(Y32113EB3S)

详细信息
    作者简介:

    董 刚(1988- ),男,陕西咸阳人,硕士生,ganggang818@163.com.

  • 中图分类号: V57

Single event charge collection in CMOS device

  • 摘要: 针对90 nm CMOS(Complementary Metal Oxide Semiconductor)工艺,采用三维数值模拟方法,研究了反相器中NMOS(Negative channel-Metal-Oxide-Semiconductor)晶体管与PMOS(Positive channel-Metal-Oxide-Semiconductor)晶体管的单粒子瞬变(SET,Single Event Transient)电流脉冲,深入分析了PMOSFET(Positive channel-Metal-Oxide-Semiconductor Field-Effect Transistor)与NMOSFET(Negative channel-Metal-Oxide-Semiconductor Field-Effect Transistor)发生单粒子效应时电荷输运过程和电荷收集机理.研究结果表明,由于电路耦合作用,反相器中晶体管的电荷收集与单个晶体管差异显著;反相器中PMOS晶体管电荷收集过程中存在寄生双极放大效应,NMOS晶体管中不存在寄生双极放大效应;由于双极放大效应,90 nm工艺下PMOS晶体管产生的SET电压脉冲比NMOS晶体管产生的电压脉冲持续时间更长,进而导致PMOS晶体管的SET效应更加敏感.研究结果为数字电路SET的精确建模、进行大规模集成电路SET效应模拟提供了参考依据.

     

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出版历程
  • 收稿日期:  2013-07-30
  • 网络出版日期:  2014-06-20

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