[1] |
Benedetto J M, Eaton P H,Mavis D G,et al.Digital single event transient trends with technology node scaling[J].Nuclear Science,IEEE Transactions on,2006,53(6):3462-3465
|
[2] |
Benedetto J M, Eaton P H,Avery K,et al.Heavy ion-induced digital single-event transients in deep submicron processes[J].Nuclear Science,IEEE Transactions on,2004, 51(6): 3480-3485
|
[3] |
Amusan O A, Witulsk A F,Massengill L W,et al.Charge collection and charge sharing in a 130 nm CMOS technology[J].Nuclear Science,IEEE Transactions on,2006,53(6):3253-3258
|
[4] |
Olson B D, Ball D R,Warren K M,et al.Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design[J].Nuclear Science,IEEE Transactions on,2005,52(6):2132-2136
|
[5] |
Olson B D, Amusan O A,Dasgupta S,et al.Analysis of parasitic PNP bipolar transistor mitigation using well contacts in 130 nm and 90 nm CMOS technology[J].Nuclear Science,IEEE Transactions on,2007,54(4):894-897
|
[6] |
刘征,陈书明, 梁斌,等.单粒子瞬变中的双极放大效应研究.[J].物理学报,2010,59(1):649-654 Liu Zheng,Chen Shuming,Liang Bin,et al.Research of bipolar amplification effect in single event transient[J].Acta Physica Sinica,2010,59(1):649-654(in Chinese)
|
[7] |
卓青青, 刘红侠,郝跃.NMOS器件中单粒子瞬态电流收集机制的二维数值分析[J].物理学报,2012,61(21):218501-1-7 Zhuo Qingqing,Liu Hongxia,Hao Yue.Two-dimensional numerical analysis of the collection mechanism of single event transient current in NMOSFET[J].Acta Physica Sinica,2012,61(21):218501-1-7(in Chinese)
|
[8] |
Liu Z, Chen S M,Chen J J,et al.Parasitic bipolar amplification in single event transient and its temperature dependence[J].Chinese Physics B,2012,21(9):099401-1-6
|
[9] |
Arslanbekov R, Fedoseyev A,Turowski M.Mixed-mode simulations of ICs with complex nuclear events from MRED/Geant4 with 3D TCAD[C]//16 th International Conference on Mixed Design of Integrated Circuits and Systems.Piscataway,NJ:IEEE,2009:468-471
|
[10] |
Chen J J, Chen S M,He Y,et al.Novel layout technique for n-hit single-event transient mitigation via source-extension[J].Nuclear Science,IEEE Transactions on,2012,59(6):2859-2866
|
[11] |
BlackJ D, Ball D R,Fleetwood D M,et al.Charactering SRAM single event upset in terms of single and multiple node charge collection[J].Nuclear Science,IEEE Transactions on,2008, 55(6): 2943-2947
|